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| DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter age BFG135 4 1 Top view 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 145 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo output voltage open base CONDITIONS open emitter - - - - 80 - - - MIN. - - - - 130 7 16 12 850 TYP. MAX. 25 15 150 1 - - - - - GHz dB dB mV UNIT V V mA W dim = -60 dB; IC = 100 mA; VCE = 10 V; - RL = 75 ; Tamb = 25 C; f(p+q-r) = 793.25 MHz LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 13 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 145 C (note 1) open emitter open base open collector CONDITIONS - - - - - -65 - MIN. MAX. 25 15 2 150 1 150 175 UNIT V V V mA W C C Philips Semiconductors Product specification NPN 7GHz wideband transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS IE = 0; VCB = 10 V IC = 100 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo d2 output voltage second order intermodulation distortion note 1 note 2 IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 C; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz Notes 1. dim = -60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 445.25 MHz; Vq = Vo -6 dB; fq = 453.25 MHz; Vr = Vo -6 dB; fr = 455.25 MHz; measured at f(p+q-r) = 443.25 MHz. 2. dim = -60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. MIN. - 80 - - - - - - - - - TYP. - 130 2 7 1.2 7 16 12 900 850 -58 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 145 C (note 1) BFG135 THERMAL RESISTANCE 30 K/W MAX. 1 - - - - - - - - - - UNIT A pF pF pF GHz dB dB mV mV dB - -53 - dB 1995 Sep 13 3 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 handbook, full pagewidth ,, , L6 C4 C5 VBB L5 C3 L3 C6 R1 R2 input 75 C1 L1 L2 L4 DUT C7 C2 R3 R4 MBB284 VCC output 75 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. List of components (see test circuit) DESIGNATION C1, C3, C5, C6 C2, C7 C4 (note 1) L1 L2 L3 (note 1) L4 L5 L6 (note 1) R1 R2 (note 1) R3, R4 Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 1 1 16 inch; thickness of copper sheet 32 inch. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor miniature ceramic plate capacitor microstripline microstripline 1.5 turns 0.4 mm copper wire microstripline Ferroxcube choke 0.4 mm copper wire metal film resistor metal film resistor metal film resistor 75 5 25 10 200 27 H nH k length 30 mm 2322 180 73103 2322 180 73201 2322 180 73279 VALUE 10 1 10 75 75 UNIT nF pF nF length 7 mm; width 2.5 mm length 22mm; width 2.5 mm int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 DIMENSIONS CATALOGUE NO. 2222 590 08627 2222 851 12108 2222 629 08103 1995 Sep 13 4 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 handbook, full pagewidth VBB C3 VCC C5 R1 R3 L3 L5 75 input C1 L1 C2 R2 R4 L6 C4 L2 C6 L4 C7 75 output MBB299 andbook, full pagewidth 80 mm 60 mm MBB298 handbook, full pagewidth MBB297 Fig.3 Intermodulation distortion test printed-circuit board. 1995 Sep 13 5 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB300 MBB294 handbook, halfpage P 1.2 tot (W) handbook, halfpage 160 1.0 h FE 0.8 120 0.6 0.4 80 0.2 0 0 50 100 150 Ts 200 ( o C) 40 0 40 80 120 160 I C (mA) VCE = 10 V; Tj = 25 C. Fig.5 Fig.4 Power derating curve. DC current gain as a function of collector current. MBB295 handbook, halfpage 3 handbook, halfpage 8 MBB296 C re (pF) fT (GHz) 6 2 4 1 2 0 0 4 8 12 16 20 VCB (V) 0 0 40 80 120 I C (mA) 160 IE = 0; f = 1 MHz; Tj = 25 C. VCE = 10 V; f = 1 GHz; Tamb = 25 C. Fig.6 Feedback capacitance as a function of collector-base voltage. Fig.7 Transition frequency as a function of collector current. 1995 Sep 13 6 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MBB292 MBB293 handbook, halfpage 45 d im (dB) handbook, halfpage 45 d im (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 100 120 I C (mA) 70 20 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 900 mV; Tamb = 25 C; f(p+q-r) = 443.25 MHz. VCE = 10 V; Vo = 850 mV; Tamb = 25 C; f(p+q-r) = 793.25 MHz. Fig.8 Intermodulation distortion as a function of collector current. Fig.9 Intermodulation distortion as a function of collector current. MBB291 MBB290 handbook, halfpage 45 d2 (dB) handbook, halfpage 45 d2 (dB) 50 50 55 55 60 60 65 65 70 20 40 60 80 100 120 I C (mA) 70 20 40 60 80 100 120 I C (mA) VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz. VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C f(p+q) = 810 MHz. Fig.10 Second order intermodulation distortion as a function of collector current. Fig.11 Second order intermodulation distortion as a function of collector current. 1995 Sep 13 7 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 handbook, halfpage Z 60 50 MEA951 L () handbook, halfpage 50 MEA952 ZL () 40 RL 40 30 20 10 RL 30 20 10 0 -10 XL 0 0.25 0.50 0.75 1.0 POUT (W) 0 0 0.5 1 XL POUT (W) 1.5 VCE = 7.5 V; f = 900 MHz. VCE = 10 V; f = 900 MHz. Fig.12 Load impedance as a function of output power. Fig.13 Load impedance as a function of output power. handbook, halfpage 60 MEA953 MEA948 ZL () handbook, halfpage 10 50 RL Zi () 8 ri xi 6 40 30 4 20 XL 2 10 0 0 0.5 1 P (W) 1.5 OUT 0 0 0.25 0.50 0.75 1.0 P (W) OUT VCE = 12.5 V; f = 900 MHz. VCE = 7.5 V; f = 900 MHz. Fig.14 Load impedance as a function of output power. Fig.15 Input impedance as a function of output power. 1995 Sep 13 8 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA949 MEA950 handbook, halfpage 10 handbook, halfpage 10 Zi () 8 ri Zi () 8 ri 6 xi 6 xi 4 4 2 2 0 0 0.5 1 POUT (W) 1.5 0 0 0.5 1 POUT (W) 1.5 VCE = 10 V; f = 900 MHz. VCE = 12.5 V; f = 900 MHz. Fig.16 Input impedance as a function of output power. Fig.17 Input impedance as a function of output power. MEA947 MEA945 handbook, halfpage 80 handbook, halfpage 1.5 (%) 70 V CE = 12.5 V 7.5 V 60 10 V V CE = 12.5 V P OUT (W) 10 V 1 7.5 V 0.5 50 40 0 0.5 1 POUT (W) 1.5 0 0 100 200 P IN (mW) 300 f = 900 MHz. f = 900 MHz. Fig.18 Efficiency as a function of output power. Fig.19 Output power as a function of input power. 1995 Sep 13 9 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 MEA946 MBB289 handbook, halfpage 10 handbook, halfpage 40 Gp (dB) 8 G UM V CE 12.5 V = (dB) 30 6 10 V 20 7.5 V 4 10 2 0 0 0.5 1 POUT (W) 1.5 0 10 102 103 f (MHz) 104 IC = 100 mA; VCE = 10 V; Tamb = 25 C. f = 900 MHz. Fig.20 Power gain as a function of output power. Fig.21 Maximum unilateral power gain as a function of frequency. 1995 Sep 13 10 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 50 handbook, full pagewidth 25 100 10 250 +j 0 -j 10 25 50 100 250 10 250 25 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 .. 100 MBB288 Fig.22 Common emitter input reflection coefficient (S11). 90 o handbook, full pagewidth 120 o 60 o 150 o 30 o 180 o 50 40 30 20 10 0o 150 o 30 o 120 o 90 o IC = 100 mA; VCE = 10 V; Tamb = 25 C. 60 o MBB286 Fig.23 Common emitter forward transmission coefficient (S21). 1995 Sep 13 11 Philips Semiconductors Product specification NPN 7GHz wideband transistor BFG135 90 o handbook, full pagewidth 120 o 60 o 150 o 30 o 180 o 0.1 0.2 0.3 0.4 0.5 0.6 0o 150 o 30 o 120 o 90 o IC = 100 mA; VCE = 10 V; Tamb = 25 C. 60 o MBB285 Fig.24 Common emitter reverse transmission coefficient (S12). 50 handbook, full pagewidth 25 100 10 250 +j 0 -j 10 25 50 100 250 10 250 25 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 .. 100 MBB287 Fig.25 Common emitter output reflection coefficient (S22). 1995 Sep 13 12 |
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